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Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

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5 Author(s)
Wang, Q. ; Department of Electrical Engineering and Computer Science, The University of Kansas, Lawrence, Kansas 66045, USA ; Hui, R. ; Dahal, R. ; Lin, J.Y.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3527089 

We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the 4I13/2 and 4I15/2 energy levels. The carrier lifetime in the 4I13/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 24 )

Date of Publication:

Dec 2010

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