By Topic

Memristive and Memcapacitive Characteristics of a Au/Ti– \hbox {HfO}_{2} -InP/InGaAs Diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jie Sun ; Div. of Solid State Phys., Lund Univ., Lund, Sweden ; Lind, E. ; Maximov, I. ; Xu, H.Q.

This letter reports on room-temperature electrical measurements of a Au/Ti- HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high- κ oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-κ dielectrics on III-V semiconductors and their potential applications in nanoelectronics.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )