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High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

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6 Author(s)
Lesecq, M. ; Inst. d''Electron., de Microelectron. et de Nanotechnol., Unite Mixte de Rech. Centre Nat. de la Rech. Sci., Villeneuve-d''Ascq, France ; Hoel, V. ; Lecavelier des Etangs-Levallois, A. ; Pichonat, E.
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In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (LG = 2 μm) on a flexible tape are presented. Under 0.16 % strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands VDS = 18 V.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )