Referenced Items are not available for this document.
Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on polyimide/polyethylene-terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19 cm2/V·s and a gate voltage swing of ~0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 μs. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
2
)
Date of Publication: Feb. 2011
- Page(s):
- 170 - 172
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11769877
- Digital Object Identifier :
- 10.1109/LED.2010.2093504
- Product Type:
- Journals & Magazines
- Date of Publication :
- 17 December 2010
- Date of Current Version :
- 24 January 2011
- Issue Date :
- Feb. 2011
- Sponsored by :
- IEEE Electron Devices Society
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