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Presented in this letter are the C-V data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The C-V curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using C-V data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance Rsd. These observed data are compared with the data from planar MOS capacitor.