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RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation

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7 Author(s)
Kolluri, S. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Brown, D.F. ; Hoi Wong, Man ; Dasgupta, S.
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We present a deep-recessed nitrogen-polar AlGaN/GaN MIS-HEMT employing a V-gate structure recessed through a thick GaN cap to prevent dc-to-RF dispersion. A process for selectively dry etching N-polar GaN over AlGaN has been established to achieve repeatable etch depth for the gate recess. Devices with a drawn gate length of 0.7- μm showed a current-gain cutoff frequency (fT) of 15 GHz and a power-gain cutoff frequency (fmax) of 42 GHz. A continuous-wave output power density of 5.5 W/mm was measured at 4 GHz, with a record associated power-added efficiency of 74% and a large-signal gain of 14.5 dB at a drain bias of 24 V.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )

Date of Publication:

Feb. 2011

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