By Topic

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kolluri, S. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Brown, D.F. ; Hoi Wong, Man ; Dasgupta, S.
more authors

We present a deep-recessed nitrogen-polar AlGaN/GaN MIS-HEMT employing a V-gate structure recessed through a thick GaN cap to prevent dc-to-RF dispersion. A process for selectively dry etching N-polar GaN over AlGaN has been established to achieve repeatable etch depth for the gate recess. Devices with a drawn gate length of 0.7- μm showed a current-gain cutoff frequency (fT) of 15 GHz and a power-gain cutoff frequency (fmax) of 42 GHz. A continuous-wave output power density of 5.5 W/mm was measured at 4 GHz, with a record associated power-added efficiency of 74% and a large-signal gain of 14.5 dB at a drain bias of 24 V.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )