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To achieve a novel weak snapback characteristic in the high voltage nLDMOS

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5 Author(s)
Shen-Li Chen ; Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan ; Tzung-Shian Wu ; Hung-Wei Chen ; Chun-Hsing Shih
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A drain-side engineering to LDMOS by doping concentration and length modulations of the N-type adaptive layer to obtain weak snapback characteristic nLDMOS are presented in this work. It's a novel method to reduce trigger voltage(Vt1) and to increase holding voltage(Vh). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage, holding voltage and Ron resistance distribution of these novel HV nLDMOS devices.

Published in:

Next-Generation Electronics (ISNE), 2010 International Symposium on

Date of Conference:

18-19 Nov. 2010