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A simple process of thin-film transistor using the trench-oxide layer for improving 1T-DRAM performance

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5 Author(s)
Hsien-Nan Chiu ; Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Jyi-Tsong Lin ; Yi-Chuen Eng ; Tzu-Feng Chang
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In this paper, we propose a simple trench-oxide thin-film transistor (TO TFT) process for 1T-DRAM applications. Our proposed TO TFT structure has several novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (~72%) and the retention time (~50%). 3. The thermal stability is drastically improved by its naturally formed source/drain tie. The above mentioned features help our proposed device structure to demonstrate the desired characteristics that are better than that of a conventional TFT. Additionally, the thermal instability is drastically improved which is good for long-term device operation.

Published in:

Next-Generation Electronics (ISNE), 2010 International Symposium on

Date of Conference:

18-19 Nov. 2010