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Graphene growth by molecular beam epitaxy on the carbon-face of SiC

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9 Author(s)
Moreau, E. ; IEMN, UMR CNRS 8520, Avenue Poincare, P.O. Box 60069, 59652 Villeneuve d’Ascq Cedex, France ; Godey, S. ; Ferrer, F.J. ; Vignaud, D.
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Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.

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Applied Physics Letters  (Volume:97 ,  Issue: 24 )