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Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance

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4 Author(s)
M. Al-Sa'di ; Université de Bordeaux, Laboratoire de l'Intégration du Matériau au Système (IMS), CNRS, UMR 5218, 351 Cours de la Libération Bat 31, 33405 Talence Cedex, France ; S. Fregonese ; C. Maneux ; T. Zimmer

The impact of utilizing silicon oxide (SiO2) strain layer on NPN-SiGe-HBT device's electrical properties and frequency response has been studied using TCAD modeling. Simulations based on hydrodynamic (HD) model have been carried out to clarify the impact of utilizing SiO2 strain layer in the collector region on the device performance. Simulation results show that NPN-SiGe-HBT device employing SiO2 strain layer in the collector region exhibit better high frequency characteristics in comparison with an equivalent conventional HBT device. An approximately, 14% of improvement in fT, and 9% of improvement in fMAX have been achieved. Despite the very small decrease in the break down voltage (BVCE0) value (~1%), the fT ×BVCE0 product enhancement is about 12% by means of strain engineering.

Published in:

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

Date of Conference:

4-6 Oct. 2010