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A high performance 36V complementary bipolar technology on low thermal resistance compound buried layer SOI substrates

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5 Author(s)
Harrington, S.J. ; Plessey Semicond., Swindon, UK ; Bousquet, A. ; Nigrin, S. ; Suder, S.
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In this paper a new high voltage, high performance, high packing density, silicon complementary bipolar technology on novel low thermal resistance compound buried layer (CBL) SOI is reported. NPN and Vertical PNP devices have been fabricated with matched DC and AC characteristics, cut-off frequencies of 3 GHz and breakdowns greater than 36 Volts. The thermal resistance and substrate capacitance of the fabricated devices confirms the superior performance of the CBL SOI substrates.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Date of Conference:

4-6 Oct. 2010