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The CuIn1-xGaxSe2 (CIGS) films are prepared by the selenization process including the deposition of the metal precursors followed by heating the metal precursors in a Se overpressure. The impacts of Se deposition rates on the morphology, grain growth, and atomic ratios of the resulting CIGS films are investigated. The CIGS films prepared at the high Se flow rate exhibit the improved surface morphology. The CIGS films prepare by slenization process with Se vapor are made into solar cells. The best active-area efficiency of 11.9% for the CIGS solar cells fabricated with the given selenization conditions is achieved.