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The threshold voltage, Vth of a double-gate Schottky-Barrier (DGSB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in the channel is obtained and the results are verified via simulations, good agreement is observed. A new definition for Vth is given, and an analytic expression for Vth is presented. We find that when the silicon thickness, tsi is small (<;3 nm), Vth is very sensitive to it. Vth increases dramatically with the decreasing of tsi. Vth also increases with the increasing of the oxide thickness, and with the decreasing of the drain-source voltage. These results can be of great help to the ultralarge-scale integrated-circuit (ULSI) designers.
Date of Conference: 1-4 Nov. 2010