An analytic threshold voltage model for the double-gate Schottky-Barrier source/drain MOSFETs

The threshold voltage, V
_th
of a double-gate Schottky-Barrier (DGSB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in the channel is obtained and the results are verified via simulations, good agreement is observed. A new definition for V
_th
is given, and an analytic expression for V
_th
is presented. We find that when the silicon thickness, t
_si
is small (<;3 nm), V
_th
is very sensitive to it. V
_th
increases dramatically with the decreasing of t
_si
. V
_th
also increases with the increasing of the oxide thickness, and with the decreasing of the drain-source voltage. These results can be of great help to the ultralarge-scale integrated-circuit (ULSI) designers.