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An improved negative level shifter for high speed and low power applications

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5 Author(s)
Jianhua Ying ; Dept. of Electron. Sci. & Tech., Huazhong Univ. of Sci. & Tech., Wuhan, China ; Fenghu Wang ; Chuan Ding ; Yonghui Ji
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An improved negative level shifter with high speed and low power consumption is presented. To reduce the switching delay and power consumption, a boost circuit is designed and additional charging current paths are introduced in the improved level shifter. The circuit has been designed in 130nm triple-well standard CMOS technology with a nominal power supply VDD of 1.5V and a negative voltage of -4.5V. Simulation results show that the switching delay and power consumption have been significantly reduced by roughly 78% and 51%, respectively, compared with the conventional negative level shifter.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010

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