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A new extraction method for InGaP/GaAs HBTs based on direct optimization is proposed. Through modification of conventional GP formulation, the variations of transport saturation current and ideal forward transit time versus biases are incorporated into the compact model. Rather than intense and complicated iterative optimization, this new parameter extraction methodology realized the united optimization for DC and RF performances together for the first time. The new modeling approach is verified by comparing the simulated DC curves as well as S-parameter with the measured data of InGaP/GaAs HBT over wide frequency and bias ranges. The excellent results demonstrate the effectiveness of the modeling methodology for InGaP/GaAs HBTs.
Date of Conference: 1-4 Nov. 2010