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Processing material evaluation and ultra-wideband modeling of through-strata-via (TSV) in 3D integrated circuits and systems

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6 Author(s)
Zheng Xu ; Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA ; Beece, A. ; Dingyou Zhang ; Qianwen Chen
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Since the conventional planar ICs encountered many physical, technological and economic bottlenecks, 3D integration by stacking and connecting function blocks in a vertical fashion is regarded as a viable approach to alleviate such bottlenecks. Through-strata-via (TSV) is one of the most attractive 3D integration solutions, which offers a massive number of short interconnects, high bandwidth, reduced delay and power consumption, heterogeneous integration, small footprint, improved yield, and reduced volume production cost. This paper reports on electrical characterizations and wideband modeling of typical TSV structures up to 100 GHz. The analysis is conducted in both the time domain and frequency domain, unveiling the impacts of processing materials on TSV electrical performance. The accurate broadband modeling approaches and results facilitate and benefit the infant 3D CAD development.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010