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Improved subthreshold swing and gate bias stressing stability of a-IGZO thin-film transistors with HfON/HfO2/HfON tri-stack dielectrics

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3 Author(s)
Xingsheng Tong ; Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China ; Yuan, Longyan ; Zou, Xiao

The electrical characteristics of a-IGZO thin-film transistors (TFTs) with HfO2 and HfON/HfO2/HfON (NON) tri-stack gate dielectrics are comparative investigated. Experimental results indicate that NON gate dielectric can effectively improve interface properties and enhance device reliability compared to HfO2 gate insulator. Bottom gate a-IGZO TFTs with NON gate dielectrics exhibit improved performance with a saturation mobility of 10.2 cm2/V·s, an on-off current ratio of 2.2 × 106, a subthreshold slope of 0.13 V/decade, and a threshold voltage shift of 0.7 V after gate bias stress at 10 V for 300 s, which are ascribed to the inserting of HfON interlayers between substrate and HfO2, and between HfO2 and channel film.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010

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