Cart (Loading....) | Create Account
Close category search window
 

Improved subthreshold swing and gate bias stressing stability of a-IGZO thin-film transistors with HfON/HfO2/HfON tri-stack dielectrics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Xingsheng Tong ; Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China ; Yuan, Longyan ; Zou, Xiao

The electrical characteristics of a-IGZO thin-film transistors (TFTs) with HfO2 and HfON/HfO2/HfON (NON) tri-stack gate dielectrics are comparative investigated. Experimental results indicate that NON gate dielectric can effectively improve interface properties and enhance device reliability compared to HfO2 gate insulator. Bottom gate a-IGZO TFTs with NON gate dielectrics exhibit improved performance with a saturation mobility of 10.2 cm2/V·s, an on-off current ratio of 2.2 × 106, a subthreshold slope of 0.13 V/decade, and a threshold voltage shift of 0.7 V after gate bias stress at 10 V for 300 s, which are ascribed to the inserting of HfON interlayers between substrate and HfO2, and between HfO2 and channel film.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.