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On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells

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7 Author(s)
Lifeng Liu ; Institute of Microelectronics, Peking University, Beijing 100871, China ; Bin Gao ; Bing Chen ; Yuansha Chen
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Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance are studied. Ag/SiO2/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<;0.5V), low operation current (~1μA), high resistance ratio (104) and good retention characteristic. Co-existence of bipolar and unipolar resistance switching is observed in Ag/SiO2/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO2/Pt cells are discussed.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010