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Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance are studied. Ag/SiO2/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<;0.5V), low operation current (~1μA), high resistance ratio (104) and good retention characteristic. Co-existence of bipolar and unipolar resistance switching is observed in Ag/SiO2/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO2/Pt cells are discussed.