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Electrical and testing reliability of CuxO based RRAM

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8 Author(s)
Wan, Haijun ; ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China ; Xiaopeng Tian ; Yali Song ; Wenjin Luo
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This work studies the electrical and testing reliability issues of CuxO based RRAM (Resistive Random Access Memory). Firstly, we study the most important electrical reliability issue-data retention capability, and propose a filament/charge trap combined model to clarify the retention failure mechanism. Secondly, we respectively study the reliability problems caused by the SET compliance current in 1R-architecture and 1T1R-architecture devices during the electrical testing, and observe the compliance current overshoot phenomenon for the first time in 1R-architecture device by using a self-build compliance current capturing system.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010