By Topic

Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
H. -S. Philip Wong ; Dept. of Electrical Engineering and Center for Integrated Systems, Stanford University, CA 94305, USA ; SangBum Kim ; Byoungil Lee ; Marissa A. Caldwell
more authors

Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010