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Role of oxygen in Hf-based high-k gate stacks on Vfb shifts

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3 Author(s)
Toshihide Nabatame ; MANA Foundry and Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan ; Akihiko Ohi ; Toyohiro Chikyow

We have investigated the role of oxygen in Hf-based high-k gate stacks on Vfb shift. It is clearly shown that the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant irrespective of the oxidation annealing temperature. On the other hand, the HfO2-based high-k materials of the strong ionic oxide caused the positive Vfb shifts by introducing additional oxygen into high-k films. These suggest that the control of strength of ionic bond and oxygen content due to the oxygen transfer at hetero interface of ionic high-k/covalent SiO2 is a key if it assumes that the Vfb shift occurs dominantly at high-k/SiO2 interface.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010