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Empirical process model for arsenic diffusion in Si1−xGex alloys

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2 Author(s)
Sharma, A.A. ; Dept. of Electron., Sardar Patel Inst. of Technol., Mumbai, India ; Mane, S.S.

The thermal diffusion behavior of ion-implanted Arsenic (As) in SiGe alloy has been investigated and modeled. This paper introduces an empirical model consisting of physics-based and process parameters for evaluating the effective diffusivity of Arsenic through SiGe accurately. The process parameters that were found to dominate the enhancement in arsenic diffusion were the Germanium content, diffusion temperature and the anneal time. The model was validated for the germanium content of up to 45% with the reported data and the existing simulation models in Silvaco. The model incorporates all the effects associated with the change in the process parameters which affect the diffusivity of As in relaxed-SiGe.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010