High mobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2 /TiN gate stack

P-MOSFETs with HfO
2
gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.% and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of ∼200 cm
²
/V·s in the strong inversion regime.