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High mobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2 /TiN gate stack

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9 Author(s)
B. Zhang ; Institute of Bio- and Nanosystems (IBN-1), Forschungszentrum Juelich and JARA- Fundamentals of Future Information Technology, 52425, Germany ; W. Yu ; Q. T. Zhao ; J. -M. Hartmann
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P-MOSFETs with HfO2 gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.% and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of ~200 cm2/V·s in the strong inversion regime.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010