Hole-mobility enhancement in ultrathin strained Si0.5Ge0.5-on-insulator fabricated by Ge condensation technique

Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si
_0.93
Ge
_0.07
layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.