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Quantum transport and electron-phonon interaction in nanoscale MOSFETs

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4 Author(s)
Mori, N. ; Grad. Sch. of Eng., Osaka Univ., Suita, Japan ; Minari, H. ; Mil'nikov, G. ; Kamakura, Yoshinari

Quantum-transport simulations of current-voltage characteristics are performed in nanoscale metal-oxide-semiconductor field-effect-transistors. Effects of interface roughness, discrete impurity, and phonon scattering are studied. Band-structure effects in p-type nanowire transistors are also investigated.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010

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