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A unified compact model for emerging DG FinFETs and GAA nanowire MOSFETs including long/short-channel and thin/thick-body effects

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7 Author(s)
Xing Zhou ; School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 ; Guojun Zhu ; Machavolu K. Srikanth ; Shihuan Lin
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This paper presents the characteristics of ideal double-gate/gate-all-around (DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body effects. A unified compact model (Xsim) based on the unified regional modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate the expected behaviors, which should be included in the core model describing such emerging devices.

Published in:

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Date of Conference:

1-4 Nov. 2010