By Topic

Realisation of a single-chip, silicon germanium: C-based power amplifier for multi-band worldwide interoperability for microwave access applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kaynak, M. ; Fac. of Eng. & Natural Sci., Sabanci Univ., Istanbul, Turkey ; Tekin, I. ; Gurbuz, Y.

A fully integrated multi-band power amplifier (PA) using a 0.25 m silicon germanium (SiGe):C process with an output power of above 25 dBm is presented. The behaviour of the amplifier has been optimised for multi-band operation covering, 2.4, 3.6 and 5.4 GHz (ultra wide band-worldwide interoperability for microwave access) frequency bands for higher 1-dB compression point and efficiency. Multi-band operation is achieved using a multi-stage topology where parasitic components of active devices are also used as components for matching networks, in turn decreasing the value and number of matching components. Measurement results of the PA provided the following performance parameters: 20.5 dBm 1-dB compression point, 23 dB gain and 7 efficiency at the 2.4 GHz band; 25.5 dBm 1-dB compression point, 31.5 dB gain and 17.5 efficiency at the 3.6 GHz band; 22.4 dBm 1-dB compression point, 24.4 dB gain and 9.5 efficiency at the 5.4 GHz band. Measurement results show that usage of both multi-stage topology and parasitic components as part of the matching network have provided a wider band operation with higher output power levels, above 25 dBm, with SiGe:C process.

Published in:

Microwaves, Antennas & Propagation, IET  (Volume:4 ,  Issue: 12 )