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Index-Coupled Quantum-Dot 1.3- \mu m Distributed-Feedback Lasers Fabricated With a Combination MOCVD/MBE Process

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5 Author(s)
Hu, Junjie ; Dept. of Electr. & Comput. Eng., State Univ. of New York, Binghamton, NY, USA ; Klotzkin, David ; Huang, Jia-Sheng ; Sun, Xinyu
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Quantum-dot (QD) lasers have been widely studied due to their attractive features of low-threshold current density, high gain, low chirp, and superior over-temperature performance. In this letter, index-coupled 1.3- μm distributed-feedback (DFB) lasers were fabricated using wafer-level interference lithography for grating patterning, molecular beam epitaxy for QD growth, and metal-organic chemical vapor deposition for grating overgrowth. Single-mode, ridge waveguide devices with various cavity lengths were antireflection (AR)/ high-reflection (HR) coated and tested. Typical DC characteristics of 1500- μm devices at room temperature were threshold currents of ~50 mA, slope efficiency of ~0.25 W/A, and SMSRs >; 40 dB. Demonstration of a feasible process for wafer level fabrication along with elimination of the deleterious effects of the metal surface grating, may allow these devices to make commercial inroads.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 6 )