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\Gamma -Gate MOS-HEMTs by Methods of Ozone Water Oxidation and Shifted Exposure

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3 Author(s)
Ching-Sung Lee ; Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan ; Sheng-Han Yang ; Ming-Yuan Lin

This letter reports, for the first time, a Γ-gate metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which can achieve gate-length reduction, improved gate insulation, and formations of a field plate and a full surface passivation within the drain-source region at the same time by using the ozone water oxidation and shifted exposure techniques. The present Γ-gate MOS-HEMT has demonstrated significant improvements of 523% in the two-terminal gate-drain breakdown, 137% in the on -state drain-source breakdown, and 28%/39.3% in the unity-gain cutoff frequency/maximum oscillation frequency (fT/fmax), as compared to a conventional Schottky-gate device fabricated upon the same epitaxial structure by using an identical optical mask.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )