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Development of advanced Gunn diodes and Schottky multipliers for high power THz sources

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3 Author(s)
Amir, F. ; M & N Group, Univ. of Manchester, Manchester, UK ; Mitchell, C. ; Missous, M.

An advanced step-graded Gunn diode (~ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance Schottky diodes with non-alloyed contacts are also discussed.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010

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