By Topic

Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Marie Netrvalová ; New Technologies - Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic ; Marinus Fischer ; Jarmila Mullerová ; Miro Zeman
more authors

The paper deals with the hydrogenated amorphous silicon (a-Si:H) films about 300 nm in thickness prepared by using rf-PECVD with hydrogen dilution R = 10 of the silane source gas in the amorphous growth regime onto clean Corning Eagle 2000 glass substrates at different deposition temperatures ranging from 50 to 200°C. Structural and optical properties of the films were obtained from X-ray diffraction and UV-Vis spectrophotometry. The full width at half maximum of the first scattering peak decreases with increasing of the deposition temperature up to 150°C and then remains constant. Optical band-gaps are from 1.65 to 1.76 eV, which slightly decrease with increasing deposition temperature, whereas the refractive index increases with increasing deposition temperature. This indicates that the density of the films at higher temperature has increased.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010