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Electrical and optical properties of ZnO/Si photodiodes with embedded CdTe and CdSe/ZnS nanoparticles

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6 Author(s)
Hotový, J. ; Dept. of Microelectron., Slovak Univ. of Technol. Bratislava, Bratislava, Slovakia ; Kováč, J. ; Škriniarová, J. ; Novotny, I.
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Photodiodes based on ZnO/Si heterostructures were fabricated by sputter deposition of polycrystalline n-ZnO films on p-Si substrates. CdTe and CdSe/ZnS nanoparticles were embedded at the junction in between Si substrate and ZnO thin films. The effect of nanoparticles embedding on electrical and optical properties of ZnO/Si photodiodes has been studied. I-V and photocurrent spectra measurements revealed that embedding of nanoparticles significantly lowers the dark current of ZnO/Si photodiodes and also increases light absorption at around 600 nm for ZnO/Si photodiodes.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010