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In this work thermoelectrical properties of TiO2:(Co, Pd) and TiO2:Nb thin films have been described. Thin films were performed by high energy magnetron sputtering method. Sputtering process was carried out from mosaic targets under low pressure of oxygen reactive gas. Electrical and thermoelectrical properties of as deposited and annealed at 800 K thin films were analyzed based on resistivity and thermoelectrical voltage measurements. Results have shown that manufactured thin films had different type of electrical conductivity and good thermoelectrical stability.