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Patterning of nanometer structures by using direct-write e-beam lithography for the sensor development

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11 Author(s)
Ďurina, P. ; Dept. of Exp. Phys., FMFI UK, Bratislava, Slovakia ; Štefečka, M. ; Roch, T. ; Noskovic, J.
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In this work, the optimalisation of e-beam parameters and the writing strategy have been performed. Various positive and negative e-beam resists have been evaluated for high resolution e-beam lithography and pattern transfer. Both, lift-off method and ion beam etching have been investigated for the pattern transfer into thin Pt and MoC layer on saphire substrate.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010

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