Referenced Items are not available for this document.
The large-signal microwave characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are modeled using the conventional Gummel-Poon-based bipolar junction transistor (BJT) model and extending it to include self-heating effects. The model is incorporated as a user-defined model in a commercial circuit simulator. The experimental microwave characteristics of HBTs are analyzed using the new model and harmonic balance techniques and the impact of self-heating effects on the device large-signal characteristics is investigated. Use of constant base voltage rather than constant current is more suitable for achieving maximum output power. Self-heating induced by RF drive is reduced under constant base current conditions. Increased thermal capacitance values result in gain enhancement at high power levels
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:45
,
Issue:
4
)
Date of Publication: Apr 1997
- Page(s):
- 534 - 542
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 5561873
- Digital Object Identifier :
- 10.1109/22.566634
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1997
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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