By Topic

Preparation and properties of AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Stoklas, R. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; Gregusova, D. ; Blaho, M. ; Kordos, P.
more authors

Atomic layer deposition (ALD) technique at 300°C was used to prepare an Al2O3 dielectric layer, to form MOS-HFETs. The static (output and transfer) and dynamic (Capacitance-Voltage) characteristics were used for evaluation of investigated devices. From the static characteristic, an increase of the saturation drain current (up to 35%) and extrinsic transconductance (up to 10%) of the MOS-HFETs were observed. Higher nS on the MOS-structure, evaluated from the C-V measurement, can be responsible for these effects. The gate leakage current was also reduced about four orders of magnitude in comparison to the HFET.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010