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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

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7 Author(s)
Edwards, M.J. ; Dept. of Mech. Eng., Univ. of Bath, Bath, UK ; Vittoz, S. ; Amen, R. ; Rufer, L.
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GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN/AlGaN/sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a `drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10-50 bar (5 MPa) and above 300°C.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010