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Scaling properties of In0.7Ga0.3As buried-channel MOSFETs with atomic layer deposited gate dielectric

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7 Author(s)
Xue, F. ; Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA ; Jiang, A. ; Zhao, H. ; Chen, Y.
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Deep-submicron In0.7Ga0.3As buried-channel MOSFETs with various gate lengths down to 40 nm are demonstrated. In0.7Ga0.3As buried-channel MOSFETs were fabricated on an epitaxial wafer using an InP/In0.52Al0.48As double barrier. The device characteristics were analysed, including subthreshold swing, transconductance and drive current. Good scaling behaviour was observed for these III-V MOSFETs. For a 40-nm gate length device, the VT roll-off is around 100 mV, the subthreshold swing is 132 mV/dec and DIBL is 214 mV/V.

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Electronics Letters  (Volume:46 ,  Issue: 25 )