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III–V Multiple-Gate Field-Effect Transistors With High-Mobility \hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As} Channel and Epi-Controlled Retrograde-Doped Fin

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6 Author(s)
Hock-Chun Chin, C. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Xiao Gong ; Lanxiang Wang ; Hock Koon Lee
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We report an In0.7Ga0.3As n-channel multiple-gate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the In0.7Ga0.3As n-MuGFETs as compared with planar In0.7Ga0.3As MOSFETs. The In0.7Ga0.3As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 μA/μm at VDS = 1.5 V and VGS - VT = 3 V.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 2 )