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Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs

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3 Author(s)
William P. N. Chen ; Department of Electronics Engineering and the Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan ; Jack J. Y. Kuo ; Pin Su

This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (μSR) under process-induced uniaxial strain and compares the strain sensitivity between μSR and phonon-scattering-limited mobility (μPH). By an accurate split C-V mobility extraction method, the μSR of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that μSR has stronger stress sensitivity than μPH. Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 2 )