By Topic

A Failure-Detection Strategy for IGBT Based on Gate-Voltage Behavior Applied to a Motor Drive System

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Marco Antonio Rodriguez-Blanco ; Department of Electronics Engineering, Autonomous University of Carmen City, Carmen City, México ; Abraham Claudio-Sanchez ; Didier Theilliol ; Luis Gerardo Vela-Valdes
more authors

In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open- and short-circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on the material-redundancy approach or protection systems since the detection must be done before the device is damaged, in approximately less than 10 μs. The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time.

Published in:

IEEE Transactions on Industrial Electronics  (Volume:58 ,  Issue: 5 )