By Topic

Geometric Component in Constant-Amplitude Charge-Pumping Characteristics of LOCOS- and LDD-MOSFET Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hakim Tahi ; Microelectronics and Nanotechnology Division, Centre de Développement des Technologies Avancées (CDTA), Algiers, Algeria ; Boualem Djezzar ; Abdelmadjid Benabdelmoumen ; Bacharia Nadji
more authors

In this paper, we develop a semianalytical model that predicts the geometric component in charge-pumping (CP) measurements for local oxidation of silicon (LOCOS) and lightly doped drain (LDD) transistors. It is not only based on thermal diffusion, drift field, and self-induced drift field but also on the contribution of the active CP area and the low-level voltage (VL) of the gate signal. By adding this model to constant-amplitude CP components, such as LOCOS, LDD, and effective channel regions, we will be able to compute ICP-VL characteristics of LDD-MOSFET devices with LOCOS structure. In addition, we compare the geometric component model against numerous experimental data obtained from transistors of different gate lengths and widths. The calculated ICP- VL characteristics with geometric component model are found in good correlation with the experimental ICP- VL data and are more accurate than the calculated CP without the geometric component. This modeling approach can be extended for MOSFET stress reliability evaluation such as negative bias temperature instability and radiation degradations.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:11 ,  Issue: 1 )