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An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

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10 Author(s)

A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Omega , a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth.<>

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Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 7 )