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The influence of gate-induced drain leakage current by DC-stress on p-MOSFET scaling

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2 Author(s)
Bae, J.C. ; Dept. of Electron. Eng., Dong-eui Univ., Pusan, South Korea ; Lee, Y.J.

The gate-induced drain leakage (GIDL) current due to electron/hole trapping and ΔDit generation in MOSFETs, which has appeared as an additional constraint in scaling down MOSFET devices. The band to band (B-B) tunneling and band to defect (B-D) tunneling of boundary at constant gate-drain voltage (|Vgd|) are decreased under increasing stress time. Searching for a part of interface trap density (ΔDit) with threshold voltage shift, it is pressured under on-state stress (Vg⩾Vd/2, Vg<Vd). The results show that the degradation of GIDL current is increased by increasing stress time in the p-MOSFETs. The extracted B value of GIDL current parameter is 19.0(MV/cm), which is in good agreement with the theoretical value. From the analysis it is suggested that the smaller reduction in GIDL current for the thicker gate oxide might he explained in terms of less electron tunneling

Published in:

Electron Devices Meeting, 1996., IEEE Hong Kong

Date of Conference:

29 Jun 1996

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