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Drift region doping effects on high voltage conductivity modulated thin film transistors

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3 Author(s)
Kumar, A.K.P. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong ; Sin, J.K.O. ; Poon, V.M.C.

The effects of drift region doping on the high voltage (up to 100 V) characteristics of a CMTFT (conductivity modulated thin film transistor) is investigated. It is demonstrated that a non critical implant can be used to reduce the forward voltage drop of the transistor for longer drift region devices, and a favourable trade-off between the forward voltage drop and leakage current can be obtained by using the drift region doping. Results on non-optimized devices show that for devices with breakdown voltage of 100 V, an 8 times increase in drain to source current in doped CMTFT devices causes only a 30% increase in leakage current compared to the undoped devices

Published in:

Electron Devices Meeting, 1996., IEEE Hong Kong

Date of Conference:

29 Jun 1996