By Topic

Strain at Native {\rm SiO}_{2}/{\rm Si}(111) Interface Characterized by Strain-Scanning Second-Harmonic Generation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ji-Hong Zhao ; State Key Lab. for Integrated Optoelectron., Jilin Univ., Changchun, China ; Wen Su ; Chen, Qi-Dai ; Ying Jiang
more authors

A strain-scanning second-harmonic generation technique is proposed for high-sensitivity measurement of weak strain in film surfaces or interfaces. The basic idea is the sequential application of tensile and compressive strains to a strained film sample. From the strain-dependent second-harmonic generation (SHG) intensity, the type of the strain can be easily judged from whether the SHG is enhanced or weakened, and its magnitude can be precisely calibrated by an externally applied strain that is known. Thus, the built-in strain of a SiO2/Si interface could be determined as tensile with a magnitude of 3.07×10-4.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 1 )