By Topic

GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Y. H. Wang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; K. Tai ; J. D. Wynn ; M. Hong
more authors

Vertical cavity surface emitting lasers (VCSELs) with GaAs/AlGaAs multiple quantum well (20 wells) graded-index separate-confinement-heterostructure (GRIN-SCH) active regions are discussed. The VCSEL structures, which also contained two Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As distributed Bragg reflectors, were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 mA and 14 kA/cm/sup 2/, respectively, near 0.85- mu m wavelength. Both single-longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.<>

Published in:

IEEE Photonics Technology Letters  (Volume:2 ,  Issue: 7 )