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Efficiency Enhancement in Organic Light-Emitting Devices With a Magnetic Doped Hole-Transport Layer

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10 Author(s)
Dan-Dan Zhang$^{1}$State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun, China ; Jing Feng ; Hai Wang ; Yue-Feng Liu
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Magnetic field effects on tris-(8-hydroxyquinoline) aluminum-based organic light-emitting devices (OLEDs) by employing Fe3O4 as a magnetic dopant in the hole-transport layer (HTL) have been studied. The magnetic doped OLEDs exhibit efficient injection and transport of holes, and its performances are further enhanced after a magnetic field is applied. The enhancement of luminance and current efficiency of 20% and 24% has been obtained from the magnetic doped devices, while they are only 8% and 9%, respectively, for the nondoped devices under an applied magnetic field of 500 mT. Organic magnetoresistance induced by the magnetic doped HTL is the main origin of increased electroluminescence for the magnetic doped OLEDs.

Published in:

IEEE Photonics Journal  (Volume:3 ,  Issue: 1 )