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Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits

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4 Author(s)
Jichai Jeong ; AT&T Bell Labs., Murray Hill, NJ, USA ; Vella-Coleiro, G.P. ; Kim, S.J. ; Eng, J.

DC and AC performance of three-stage InP JFET amplifiers fabricated on semi-insulating InP using ion implantation are discussed. The amplifiers were designed to have a gain >30 and a bandwidth >350 MHz, making them suitable for use in 600-Mb/s receiver optoelectronic integrated circuits (OEICs). The amplifiers show DC gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 6 )

Date of Publication:

June 1990

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