Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits

DC and AC performance of three-stage InP JFET amplifiers fabricated on semi-insulating InP using ion implantation are discussed. The amplifiers were designed to have a gain >30 and a bandwidth >350 MHz, making them suitable for use in 600-Mb/s receiver optoelectronic integrated circuits (OEICs). The amplifiers show DC gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.<
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